Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
零件编号
产品描述 (功能)
GS8150V18AB 查看數據表(PDF) - Giga Semiconductor
零件编号
产品描述 (功能)
生产厂家
GS8150V18AB
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM
Giga Semiconductor
GS8150V18AB Datasheet PDF : 25 Pages
First
Prev
11
12
13
14
15
16
17
18
19
20
Next
Last
Device Under Test
V
DDQ
= 1.5 V
DQ
25
Ω
ZQ
RQ = 250
Ω
Product Preview
GS8150V18/36AB-357/333/300/250
AC Test Load Diagram
50
Ω
50
Ω
5pF
V
DDQ
/2
V
DDQ
/2
50
Ω
50
Ω
5pF
V
DDQ
/2
Input and Output Leakage Characteristics
Parameter
Input Leakage Current
(except mode pins)
ZQ, MCH, MCL, EP2, EP3
Pin Input Current
Symbol
I
IL
I
INM
Output Leakage Current
I
OL
Test Conditions
V
IN
= 0 to V
DDQ
V
IN
= 0 to V
DDQ
Output Disable,
V
OUT
= 0 to V
DDQ
Min.
–2 uA
–50 uA
–2 uA
Max Notes
2 uA
—
50 uA
—
2 uA
—
Operating Currents
Parameter
Symbol
x36
I
DD
Operating
Current
x18
I
DD
HSTL
Deselect
I
DD3
Current
-357
0°C –40°C
to
to
70°C +85°C
650 mA 660 mA
600 mA 610 mA
150 mA 160 mA
-333
0°C –40°C
to
to
70°C +85°C
600 mA 610 mA
550 mA 560 mA
150 mA 160 mA
-300
0°C –40°C
to
to
70°C +85°C
550 mA 560 mA
500 mA 510 mA
150 mA 160 mA
-250
0°C –40°C
to
to
70°C +85°C
500 mA 510 mA
450 mA 460 mA
150 mA 160 mA
Test Conditions
SS
≤
V
IL
Max.
tKHKH
≥
tKHKH Min.
All other inputs
V
IL
≥
V
IN
≥
V
IH
Device Deselected
All inputs
V
SS
+ 0.10 V
≥
V
IN
≥
V
DD
– 0.10 V
Rev: 1.04 4/2005
11/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]