GS78108AB 查看數據表（PDF） - Giga Semiconductor

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GS78108AB

1M x 8 8Mb Asynchronous SRAM

Giga Semiconductor 

GS78108AB

Truth Table

CE

OE

WE

H

X

X

L

L

H

L

X

L

L

H

H

X: “H” or “L”

DQ1 to DQ8

Not Selected

Read

Write

High Z

VDD Current

ISB1, ISB2

—

IDD

—

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Supply Voltage

Input Voltage

Output Voltage

Allowable power dissipation

Storage temperature

VDD

VIN

VOUT

PD

TSTG

–0.5 to +4.6

V

–0.5 to VDD +0.5

V

(≤ 4.6 V max.)

–0.5 to VDD +0.5

V

(≤ 4.6 V max.)

1.5

W

–55 to 150

oC

Note:

Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended

Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.

Recommended Operating Conditions

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage for -8/10/12

Input High Voltage

Input Low Voltage

Ambient Temperature,

Commercial Range

Ambient Temperature,

Industrial Range

VDD

3.0

3.3

3.6

V

VIH

2.0

—

VDD +0.3

V

VIL

–0.3

—

0.8

V

TAc

0

—

70

oC

TAi

–40

—

85

oC

Notes:

1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns.

2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.

Rev: 1.04 5/2006

3/11

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 2003, GSI Technology

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