H13002U 查看數據表（PDF） - Shantou Huashan Electronic Devices
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H13002U Datasheet PDF : 2 Pages
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H13002U
█ ＨＩＧＨ ＶＯＬＴＡＧＥ ＳＷＩＴＣＨ ＭＯＤＥ ＡＰＰＬＩＣＩＣＡＴＩＯＮＳ
High Speed Switching
Suitable for Switching Regulator and Montor Control
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
TO-251
Tstg——Storage Temperature………………………… -65~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation………………………………… 10W
VCBO ——Collector-Base Voltage………………………………600V
VCEO——Collector-Emitter Voltage……………………………400V
VEBO ——Emitter -Base Voltage………………………………9V
1―Base， B
２―Collector，C
３― Emitter，E
IC——Collector Current……………………………………1.5A
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
BVCBO
BVCEO
BVEBO
HFE
VCE(sat)1
VCE(sat)2
VBE(sat)
ICBO
IEBO
fT
tON
tSTG
tF
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector- Emitter Saturation Voltage
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter-Base Cut-off Current
Current Gain-Bandwidth Product
Turn On Time
Storage Time
Fall Time
Min Typ Max Unit
Test Conditions
６００
４００
９
１０
８
Ｖ IC=1mA, IE=0
Ｖ IC=10mA, IB=0
Ｖ IE=1mA， IC=0
４０ VCE=10V, IC=0.1A
０．８ Ｖ IC=1A, IB=500mA
０．８ Ｖ IC=0.5A, IB=100mA
１．２ Ｖ IC=0.5A, IB=100mA
１０ μＡ VCB=500V, IE=0
１０ μＡ VEB=9V, IC=0
ＭＨｚ VCE=10V,IC=0.1A,f=1MHz
１．１ μs VCC=125V, IC=1A,
４．０ μs IB1=0.2A,IB2=-0.2A
０．７ μs RL=125Ω
█ hFE Classification
H1
H2
H3
H4
H5
１０—１６
１４－－２１
１９—２６
２４－－３１
２９－－４０
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