H2N7002K 查看數據表（PDF） - Hi-Sincerity Mocroelectronics
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H2N7002K Datasheet PDF : 5 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200803
Issued Date : 2005.03.13
Revised Date :2010,03,04
Page No. : 1/5
H2N7002K
N-CHANNEL TRANSISTOR
Description
N-channel enhancement-mode MOS transistor.
ESD protected
Absolute Maximum Ratings
Drain-Source Voltage ............................................................................................................................................ 60 V
Drain-Gate Voltage (RGS=1MΩ)............................................................................................................................. 60 V
Gate-Source Voltage ........................................................................................................................................... ±20 V
Continuous Drain Current (TA=25°C)(1)............................................................................................................. 200 mA
Continuous Drain Current (TA=100°C)(1)........................................................................................................... 115 mA
Pulsed Drain Current (TA=25°C)(2) .................................................................................................................... 800 mA
Total Power Dissipation (TC=25°C).................................................................................................................. 200 mW
Derate above 25°C .................................................................................................................................. 0.16 mW / °C
Storage Temperature............................................................................................................................... -55 to 150 °C
Operating Junction Temperature ............................................................................................................. -55 to 150 °C
Lead Temperature, for 10 second Soldering ...................................................................................................... 260 °C
Gate Source ESD Rating……………………………………………………………………………………………….… 2KV
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient................................................................................................... 625 °C / W
Electrical Characteristics (TA=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Source Leakage Current, Forward
Gate Source leakage Current, Reverse
Zero Gate Voltage Drain Current
On-State Drain Current
Static Drain-Source On-State Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
Turn-on Delay Time
Turn-off Delay Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
BVDSS
VGS(th)
IGSS/F
IGSS/R
IDSS
ID(ON)
VDS(ON)
RDS(ON)
GFS
td(on)
td(off)
Ciss
Coss
Crss
Test Conditions
VGS=0, ID=10uA
VDS=2.5V, ID=0.25mA
VGS=+20V, VDS=0
VGS=-20V, VDS=0
VDS=48V, VGS=0
VDS>2VDS(ON), VGS=10V
ID=50mA, VGS=5V
ID=500mA, VGS=10V
ID=75mA, VGS=4.5V
ID=50mA, VGS=5V
ID=500mA, VGS=10V
VDS>2VDS(ON), ID=200mA
(VDD=50V, RD=250Ω,
VGS=10V, RG=50Ω)
VDS=25V, VGS=0, f=1MHz
(1)The Power Dissipation of the package may result in a continuous drain current.
(2)Pulse Width≤300us, Duty cycle≥2%.
H2N7002K
Min Typ. Max Unit
60
-
-
V
1
-
2.0
V
-
-
10 uA
-
-
-10 uA
-
-
10 uA
500 -
- mA
-
- 0.375 V
-
- 3.75 V
Ω
-
-
5.0
Ω
-
-
5.0
Ω
80
-
-
mS
-
20
-
nS
-
40
-
nS
-
50
pF
-
25
pF
-
5
pF
HSMC Product Specification
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