PMBFJ210 查看數據表（PDF） - Philips Electronics
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PMBFJ210 Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel field-effect transistors
Product specification
PMBFJ210; PMBFJ211; PMBFJ212
40
handbook, halfpage
IDSS
(mA)
30
MGM277
20
10
0
0
−2
−4 VGSoff (V) −6
VDS = 15 V; Tj = 25 °C.
Fig.2 Drain current as a function of gate-source
cut-off voltage; typical values.
handbook,1h2alfpage
yfs
(mS)
8
MGM278
4
0
0
−2
−4 VGSoff (V) −6
VDS = 15 V; Tj = 25 °C.
Fig.3 Common-source transfer admittance as a
function of gate-source cut-off voltage;
typical values.
80
handbook, halfpage
gos
(µS)
60
MGM279
40
20
0
0
−2
−4 VGSoff (V) −6
VDS = 15 V; Tamb = 25 °C.
Fig.4 Common-source output conductance as a
function of gate-source cut-off voltage;
typical values.
handbook, h8alfpage
ID
(mA)
6
4
2
0
0
2
MGM280
VGS = 0 V
−200 mV
−400 mV
−600 mV
−1.4 V
−800 mV
−1 V
−1.2 V
4
6
8
10
VDS (V)
PMBFJ210.
Tj = 25 °C.
Fig.5 Output characteristics; typical values.
1997 Dec 01
5
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