PMBFJ210 查看數據表（PDF） - Philips Electronics

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PMBFJ210

N-channel field-effect transistors

Philips Electronics 

Philips Semiconductors

N-channel field-effect transistors

Product specification

PMBFJ210; PMBFJ211; PMBFJ212

103

handboIoDk, halfpage

(µA)

102

MGM289

10

1

10−1

10−2

10−3

10−4

10−5

−4

−3

−2

−1 VGS (V) 0

VDS = 15 V; Tj = 25 °C.

Fig.14 Drain current as a function of gate-source

voltage; typical values.

−105

handboIGok, halfpage

(pA)

−104

−103

−102

−10

−1

−10−1

0

4

MGM288

ID = 10 mA

1 mA

0.1 mA

IGSS

8

12

16

20

VDG (V)

Tj = 25 °C.

Fig.15 Gate current as a function of drain-gate

voltage; typical values.

1997 Dec 01

8

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