DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

HD6432611 查看數據表(PDF) - Renesas Electronics

零件编号
产品描述 (功能)
生产厂家
HD6432611 Datasheet PDF : 609 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Item
21.2 DC
Characteristics
Table 21.2 DC
Characteristics
Page
508,
509
510
Appendix C Product 565
Code Lineup
Revision (See Manual for Details)
Figure 21.2 amended
Item
Schmitt
trigger input
voltage
Symbol
IRQ0 to IRQ5
TPU input
capture input
TPU external
clock input
V
T
VT+
VT+ – VT–
V
T
VT+
V+–V
T
T
Min.
V
CC
×
0.2
VCC × 0.05
V
CC
×
0.2
V
CC
×
0.05
Typ.
Max.
VCC × 0.7
VCC × 0.7
Test
Unit Conditions
V
V
V
V
V
V
Item
Symbol
Input leakage RES
|I |
in
current
STBY, NMI,
MD2 to MD0,
FWE, HRxD
Ports 4 and 9
Three-state
leakage
current
(off status)
Ports 1, A to
D, F, HRxD
ITSI
Min.
Typ.
Max.
1.0
1.0
Unit
µA
µA
Test
Conditions
V = 0.5 V to
in
VCC – 0.5 V
1.0
µA
1.0
µA Vin = 0.5 V to
VCC 0.5 V
Note 5 added
Note: 5. Available only in H8S/2616 and H8S/2614.
Table amended
H8S/2616 (Before) Mask ROM version* (After) Mask ROM
version
Note * deleted
Rev. 6.00 Mar 15, 2006 page ix of xxxvi

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]