HAL114 查看數據表（PDF） - Micronas
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HAL114 Datasheet PDF : 17 Pages
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HAL11x
3.6. Electrical Characteristics at TJ = –40 °C to +140 °C , VDD = 4.5 V to 24 V, as not otherwise specified in Conditions
Typical Characteristics for TJ = 25 °C and VDD = 12 V
Symbol
IDD
IDD
VOL
VOL
IOH
IOH
ten(O)
tr
tf
RthJSB
case
SOT-89A
SOT-89B
RthJA
case
TO-92UA
Parameter
Supply Current
Supply Current over
Temperature Range
Output Voltage over
Temperature Range
Output Voltage over
Temperature Range
Output Leakage Current
Pin No.
1
1
Min.
6
3.9
3
–
3
–
3
–
Output Leakage Current over 3
–
Temperature Range
Enable Time of Output after
1
–
Setting of VDD
Output Rise Time
3
–
Output Fall Time
3
–
Thermal Resistance Junction
–
–
to Substrate Backside
Thermal Resistance Junction
–
–
to Soldering Point
Typ.
8.2
8.2
120
190
0.06
–
6
0.08
0.06
150
150
Max.
Unit
11
mA
12
mA
400
mV
500
mV
1
µA
10
µA
10
µs
0.4
µs
0.4
µs
200
K/W
200
K/W
Conditions
TJ = 25 °C
IOL = 12.5 mA
IOL = 20 mA
B < Boff,
TJ = 25 °C, VOH = 0 to 24 V
B < Boff,
VOH = 0 to 24 V
VDD = 12 V
B > BON + 2 mT or
B < BOFF – 2 mT
VDD = 12 V, RL = 820 Ohm,
CL = 20 pF
VDD = 12 V, RL = 820 Ohm,
CL = 20 pF
Fiberglass Substrate
30 mm x 10 mm x 1.5mm,
pad size see Fig. 3–4
5.0
2.0
2.0
1.0
Fig. 3–4: Recommended pad size SOT-89x
Dimensions in mm
Micronas
7
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