HAF2021 查看數據表（PDF） - Renesas Electronics

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HAF2021

Silicon N Channel MOS FET Series Power Switching

Renesas Electronics 

HAF2021(L), HAF2021(S)

Silicon N Channel MOS FET Series

Power Switching

REJ03G0179-0200Z

(Previous ADE-208-1459A(Z))

Rev.2.00

Mar.05.2004

Description

This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in

over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of

high junction temperature like applying over power consumption, over current etc.

Features

• Logic level operation (6 V Gate drive)

• High endurance capability against to the short circuit

• Built–in the over temperature shut–down circuit

• Latch type shut–down operation (Need 0 voltage recovery)

Outline

LDPAK

D

G

Gate resistor

Temperature

Sensing Circuit

Latch

Circuit

Gate

Shut-down

Circuit

S

4

4

1

2

3

1

2

3

1. Gate

2. Drain

3. Source

4. Drain

Rev.2.00, Mar.05.2004, page 1 of 8

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