1PS79SB62 查看數據表（PDF） - Philips Electronics
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1PS79SB62 Datasheet PDF : 8 Pages
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Philips Semiconductors
Schottky barrier diode
GRAPHICAL DATA
10
handbook, halfpage
IF
(mA)
1
MGT832
10−1
(2)
(1) (3)
10−2
0
0.4
0.8
1.2
1.6
2
VF (V)
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Product specification
1PS79SB62
104
handbook, halfpage
IR
(nA)
103 (1)
102 (2)
MGT833
10
(3)
1
10−1
0
10
20
30 VR (V) 40
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
0.42
handbook, halfpage
Cd
(pF)
0.38
MGT834
0.34
0.30
0.26
0.22
0
10
20
30 VR (V) 40
f = 1 MHz; Tamb = 25 °C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
2001 Jan 18
4
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