HAF2027 查看數據表（PDF） - Renesas Electronics

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HAF2027

Silicon N Channel MOS FET Series Power Switching

Renesas Electronics 

HAF2027(L), HAF2027(S)

Silicon N Channel Power MOS FET

Power Switching

REJ03G1674-0100

Rev.1.00

May 19, 2008

Description

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of

high junction temperature like applying over power consumption, over current etc..

Features

• Logic level operation (4 V Gate drive)

• Built-in the over temperature shut-down circuit

• High endurance capability against to the shut-down circuit

• Latch type shut down operation (need 0 voltage recovery)

Outline

RENESAS Package code: PRSS0004AE-A

(Package name: LDPAK (L) )

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK (S)-(1) )

123

HAF2027(L)

123

HAF2027(S)

D

1. Gate

2. Drain

(Flange)

3. Source

G

Gate Resistor

Temperature

Sensing

Circuit

Latch

Circuit

Gate

Shut-down

Circuit

S

REJ03G1674-0100 Rev.1.00 May 19, 2008

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