HAF2027 查看數據表（PDF） - Renesas Electronics
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HAF2027 Datasheet PDF : 9 Pages
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HAF2027(L), HAF2027(S)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
25 A
15
ID = 10 A
10 VGS = 4 V
25 A
ID = 10 A
5
-50 -25
VGS = 10 V
0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
1000
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
100
10
1
10
100
Case Temperature IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
50
5V
VGS = 0 V
40
30
10 V
20
10
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Forward Transfer Admittance vs.
Drain Current
1000
VDS = 10 V
100 Pulse Test
Tc = -25°C
10
25°C
1
75°C
0.1
0.01
0.001
0.0001
0.0001 0.001 0.01 0.1 1
10 100
Drain Current ID (A)
Switching Characteristics
100
tr
tf
td(off)
10
td(on)
VGS = 10 V, VDD = 30 V
PW = 300 µs, duty ≤ 1 %
1
0.1
1
10
100
Drain Current ID (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
1000
Coss
VGS = 0
f = 1 MHz
100
0 10 20 30 40 50 60
Drain to Source Voltage VDS (V)
REJ03G1674-0100 Rev.1.00 May 19, 2008
Page 5 of 8
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