HAT2044R 查看數據表（PDF） - Hitachi -> Renesas Electronics
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HAT2044R Datasheet PDF : 9 Pages
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HAT2044R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
Pch Note2
30
± 12
15
120
15
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
– 55 to + 150
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 30
Gate to source leak current
I GSS
—
Zero gate voltege drain current
I DSS
—
Gate to source cutoff voltage
VGS(off)
0.4
Static drain to source on state
RDS(on)
—
resistance
RDS(on)
—
RDS(on)
—
Forward transfer admittance
|yfs|
24
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Total gate charge
Qg
—
Gate to source charge
Qgs —
Gate to drain charge
Qgd —
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Body–drain diode forward voltage VDF
—
Body–drain diode reverse
recovery time
t rr
—
Note: 3. Pulse test
Typ Max Unit
—
—
V
—
± 0.1 µA
—
1
µA
—
1.4 V
6.5 9.0 mΩ
7.0 9.5 mΩ
9.0 13.0 mΩ
40
—
S
3420 —
pF
950 —
pF
480 —
pF
48
—
nc
32
—
nc
16
—
nc
45
—
ns
285 —
ns
470 —
ns
360 —
ns
0.85 1.1 V
45
—
ns
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±12 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 8 A, VGS = 4.5 V Note3
ID = 8 A, VGS = 4.0 V Note3
ID = 8 A, VGS = 2.5 V Note3
ID = 8 A, VDS = 10 V Note3
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4 V
ID = 15 A
VGS = 4 V, ID = 8 A
VDD ≅ 10 V
IF = 15 A, VGS = 0 Note3
IF = 15 A, VGS = 0
diF/ dt = 20 A/ µs
2
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