11EQ04 查看數據表（PDF） - Nihon Inter Electronics

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11EQ04

Schottky Barrier Diode

Nihon Inter Electronics 

SBD Type :11EQ04

OFUETLAITNUERDERSAWING

* Miniature Size

* Low Forward Voltage drop

* Low Power Loss, High Efficiency

* High Surge Capability

* 40 Volts thru 100 Volts Types Available

* 26mm&52mm Inside Tape Spacing Package Available

OUTLINE DRAWING

Maximum Ratings

Approx Net Weight:0.21g

Rating

Symbol

11EQ04

Unit

Repetitive Peak Reverse Voltage

VRRM

40

V

Non-repetitive Peak Reverse Voltage

VRSM

45

V

Average Rectified

Output Current

Without Fin or

P.C.Board

P.C.Board

mounted

1.0

IO

1.0

Ta=25°C*

Ta=53°C*

50Hz Half Sine

Wave Resistive Load

A

RMS Forward Current

IF(RMS)

1.57

A

Surge Forward Current

IFSM

40

50Hz Half Sine Wave,1cycle,

Non-repetitive

A

Operating JunctionTemperature Range Tjw

- 40 to + 150

°C

Storage Temperature Range

Tstg

- 40 to + 150

°C

Electrical • Thermal Characteristics

Characteristics

Symbol

Conditions

Min. Typ. Max.

Peak Reverse Current

IRM Tj= 25°C, VRM= VRRM

-

Peak Forward Voltage

VFM Tj= 25°C, IFM= 1.0A

-

Thermal Resistance (Junction to Ambient)

Rth(j-a)

Without Fin or P.C.Board

P.C.Board mounted

-

*:Print Lands=5x5mm,Both Sides

-

1

- 0.55

-

140

105

Unit

mA

V

°C/W

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