EP05Q04 查看數據表（PDF） - Nihon Inter Electronics

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产品描述 (功能)

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EP05Q04

Schottky Barrier Diode

Nihon Inter Electronics 

S B D T y p e : EP05Q04

FEATURES

* JEDEC SOD-123 Package

* Very Low profile 1.1mm Max

* Low Forward Voltage Drop

* Low Power Loss,High Efficiency

* High Surge Capability

* Low Thermal Resistance

* Packaged in 8mm Tape and Reel

OUTLINE DRAWING

Maximum Ratings

Approx Net Weight:0.011g

Rating

Repetitive Peak Reverse Voltage

Average Rectified Output Current

RMS Forward Current

Surge Forward Current

Operating JunctionTemperature Range

Storage Temperature Range

Symbol

VRRM

IO

IF(RMS)

IFSM

Tjw

Tstg

EP05Q04

Unit

40

V

0.43 Ta=25°C ∗ 1

0.50 Tl=110°C

50Hz Half Sine Wave,

Resistive Load

A

0.785

A

8

50Hz Half Sine Wave,1cycle

Non-repetitive

A

-40 to +150

°C

-40 to +150

°C

Electrical • Thermal Characteristics

Characteristics

Symbol

Conditions

Min. Typ. Max.

Peak Reverse Current

IRM Tj= 25°C, VRM= VRRM

-

Peak Forward Voltage

VFM Tj= 25°C, IFM=0.5A

-

Thermal Resistance

Rth(j-a) Junction to Ambient *

Rth(j-l) Junction to Lead

-

-

*1: Glass Epoxy Substrate Mounted (Soldering Lands=1x1mm,Both Sides)

(Tl: Lead Temperature)

- 100

- 0.51

- 300

- 70

Unit

µA

V

°C /W

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