HCF4015BM1(2002) 查看數據表（PDF） - STMicroelectronics
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HCF4015BM1
(Rev.:2002)
(Rev.:2002)
STMicroelectronics
HCF4015BM1 Datasheet PDF : 10 Pages
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HCF4015B
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
Symbol
Parameter
VDD (V)
Test Condition
Value (*)
Unit
Min. Typ. Max.
CLOCKED OPERATION
tPLH tPHL Propagation Delay Time
5
(carry out or decoded out
10
lines)
15
tTHL tTLH Transition Time (carry out
5
or decoded out lines)
10
15
fCL
Maximum Clock Input
Frequency
5
10
15
160 320
80 160 ns
60 120
100 200
50 100 ns
40 80
3
6
6 12
MHz
8.5 17
tW Clock Pulse Width
5
10
15
tr , tf (1)
Clock Input Rise or Fall
Time
5
10
15
tsetup Data Setup Time
5
10
15
RESET OPERATION
tPLH, tPHL Propagation Delay Time
5
10
180 90
80 40
ns
50 25
15
15 µs
15
70 35
40 20
ns
30 15
200 400
100 200 ns
15
tW Reset Pulse Width
5
10
80 160
200 100
80 40
ns
15
60 30
(*) Typical temperature coefficient for all VDD value is 0.3 %/°C.
(1) If more than one unit is cascaded in the parallel clocked application, trCL should be made less than or equal to the sum of the fixed prop-
agation delay at 15 pF and the transmission time of the carry output driving stage of the estimated capacitive load.
5/10
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