ZHCS2000(2000) 查看數據表（PDF） - Zetex => Diodes

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ZHCS2000
(Rev.:2000)

40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE

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ZHCS2000

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN. TYP. MAX. UNIT CONDITIONS.

Reverse Breakdown

V(BR)R

40

Voltage

V

IR=1mA

Forward Voltage

VF

Reverse Current

IR

Diode Capacitance

CD

Reverse Recovery

trr

Time

290 325

340 385

380 445

420 500

485 615

420

160 300

50

5.5

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

mV IF=500mA*

mV IF=1000mA*

mV IF=1500mA*

mV IF=2000mA*

mV IF=3000mA*

mV IF=2000mA*,Tamb=100°C*

µA VR=30V

pF f=1MHz,VR=25V

ns switched from

IF = 500mA to I R = 500mA

Measured at IR = 50mA

ISSUE 1 - DECEMBER 2000

4

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