HCT7000MTX 查看數據表（PDF） - Unspecified

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HCT7000MTX

N-Channel Enhancement Mode MOS Transistor

Unspecified 

Types HCT7000M, HCT7000MTX, HCT7000MTXV

Electrical Characteristics (TA = 25o C unless otherwise noted)

SYMBOL

PARAMETER

MIN MAX UNITS

TEST CONDITION

VDSS Drain-Source Voltage

60

V VGS = 0 V, ID = 10 µA

VGS(TH) Gate Threshold Voltage

.8 3.0

V VDS = VGS, ID = 1 mA

IGSS Gate Leakage

IDSS Zero Gate Voltage Drain Current

±10 nA VDS = 0 V, VGS = ±15 V

1

µA VGS = 0 V, VDS = 48 V

ID(ON) On-State Drain Current

RDS(ON) Drain-Source on-Resistance

75

5

mA VDS = 10 V, VGS = 4.5 V

Ω VGS = 10 V, ID = 0.5 A

VDS(ON) Drain-Source on-Voltage

2.5

V VGS = 10 V, ID = 0.5 A

Gfs

Forward Transconductance

100

mS VDS = 10 V, ID = 0.2 A

Ciss Input Capacitance

60 pF VDS = 25 V, VGS = 0 V, f = 1MHz

Coss Output Capacitance

25 pF

Crss Reverse Transfer Capacitance

5

pF

t(on)

Turn-on Time

t(off)

Turn-off Time

10

ns VDD = 15 V, ID = 0.5 A, Vgen = 10 V, Rg = 25 Ω

10 ns

Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.

Optek Technology, Inc.

1215 W. Crosby Road Carrollton, Texas 75006

(972)323-2200

Fax (972)323-2396

15-37

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