PN3440 查看數據表（PDF） - Philips Electronics
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PN3440 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN high-voltage transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
PN3439
PN3440
collector-emitter voltage
PN3439
PN3440
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
Product specification
PN3439; PN3440
MIN. MAX. UNIT
−
400
V
−
300
V
−
350
V
−
250
V
−
5
V
−
100
mA
−
200
mA
−
100
mA
−
500
mW
−65
+150 °C
−
150
°C
−65
+150 °C
VALUE
250
UNIT
K/W
1997 Sep 04
3
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