HE8550-C-T9N-K 查看數據表（PDF） - Unisonic Technologies
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HE8550-C-T9N-K Datasheet PDF : 4 Pages
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HE8550
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-25
V
Emitter-Base Voltage
VEBO
-6
V
SOT-23
350
mW
Collector Dissipation
SOT-89
PC
0.5
W
TO-92/TO-92NL
1
W
Collector Current
Junction Temperature
Storage Temperature
IC
TJ
TSTG
-1.5
A
+150
°C
-65 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage BVCBO IC=-100μA, IE=0
Collector-Emitter Breakdown Voltage BVCEO IC=-2mA, IB=0
Emitter-Base Breakdown Voltage
BVEBO IE=-100μA, IC=0
Collector Cut-Off Current
ICBO VCB=-35V, IE=0
Emitter Cut-Off Current
IEBO VEB=-6V, IC=0
hFE1 VCE=-1V, IC=-5mA
DC Current Gain
hFE2 VCE=-1V, IC=-100mA
hFE3 VCE=-1V, IC=-800mA
Collector-Emitter Saturation Voltage VCE(SAT) IC=-800mA, IB=-80mA
Base-Emitter Saturation Voltage
VBE(SAT) IC=-800mA, IB=-80mA
Base-Emitter Voltage
VBE VCE=-1V,IC=-10mA
Current Gain Bandwidth Product
fT VCE=-10V,IC=-50mA
Output Capacitance
Cob VCB=-10V, IE=0 f=1MHz
CLASSIFICATION OF hFE2
RANK
RANGE
C
120-200
D
160-300
MIN TYP MAX UNIT
-40
V
-25
V
-6
V
-100 nA
-100 nA
45
170
85
160 500
40
80
-0.28 -0.5
V
-0.98 -1.2
V
-0.66 -1.0
V
100 190
MHz
9.0
pF
E
250-500
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-031,F
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