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HER801 查看數據表(PDF) - Semtech Electronics LTD.

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HER801 Datasheet PDF : 2 Pages
1 2
HER801 THRU HER808
RATINGS AND CHARACTERISTIC CURVES
REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
NONINDUCTIVE
10
NONINDUCTIVE
(+)
50Vdc
(appox)
(-)
DUT
1
NON
INDUCTIVE
PULSE
GENERATOR
(NOTE 2)
OSCILLOSCOPE
(NOTE 1)
NOTES:1. Rise Time=7ns max. Input Impedance=
1 megohm 22 pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
trr
+0.5A
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
5/10ns/cm
MAXIMUM FORWARD CURRENT
DERATING CURVE
20
16
12
8
4
0
50
100
150
CASE TEMPERATURE, oC
TYPICAL REVERSE CHARACTERISTICS
1000
Tj =125 oC
100
10
Tj=25 oC
1
0.1
0
20
40
60 80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
Fig. 4-TYPICAL FORWARD CHARACTERISTICS
100
HER801-HER804
10
1
HER806-HER808
0.1
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, (V)
Fig. 5-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
150
120
8.3ms Single Half Sine Wave
JEDEC Method
90
60
30
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
Fig. 6-TYPICAL JUNCTION CAPACITANCE
150
120
90
60
30
0
1
HER801-HER805
HER806-HER808
10
100 200
REVERSE VOLTAGE. (V)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 24/09/2003

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