HFA1212 查看數據表（PDF） - Intersil

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产品描述 (功能)

生产厂家

HFA1212

Dual 350MHz, Low Power Closed Loop Buffer Amplifier

Intersil 

Die Characteristics

DIE DIMENSIONS:

69 mils x 92 mils x 19 mils

1750µm x 2330µm x 483µm

METALLIZATION:

Type: Metal 1: AICu(2%)/TiW

Thickness: Metal 1: 8kÅ ±0.4kÅ

Type: Metal 2: AICu(2%)

Thickness: Metal 2: 16kÅ ±0.8kÅ

Metallization Mask Layout

HFA1212

PASSIVATION:

Type: Nitride

Thickness: 4kÅ ±0.5kÅ

TRANSISTOR COUNT:

180

SUBSTRATE POTENTIAL (Powered Up):

Floating (Recommend Connection to V-)

HFA1212

-IN1

OUT1 NC

NC

+IN1

NC

NC

V-

V+

OUT2

-IN2

NC

NC

+IN2

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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

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