HGTG20N60C3R 查看數據表（PDF） - Harris Semiconductor
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HGTG20N60C3R Datasheet PDF : 6 Pages
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HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBT’s
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
Operating frequency information for a typical device
(Figure 11) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 3, 5, 6, 9
and 10. The operating frequency plot (Figure 11) of a typical
device shows fMAX1 or fMAX2 whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I+ tD(ON)I). Dead-
time (the denominator) has been arbitrarily held to 10% of
the on- state time for a 50% duty factor. Other definitions are
possible. tD(OFF)I and tD(ON)I are defined in Figure 17.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJMAX.
tD(OFF)I is important when controlling output ripple under a
lightly loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJMAX -
TC)/RθJC. The sum of device switching and conduction
losses must not exceed PD. A 50% duty factor was used
(Figure 11) and the conduction losses (PC) are approxi-
mated by PC = (VCE x ICE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 17. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the inte-
gral of the instantaneous power loss (ICE x VCE) during turn-
off. All tail losses are included in the calculation for EOFF; i.e.
the collector current equals zero (ICE = 0).
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
ECCOSORBD™ is a Trademark of Emerson and Cumming, Inc.
All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
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any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is
believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other
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