HGTP10N40E1D 查看數據表（PDF） - Intersil

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HGTP10N40E1D

10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

Intersil 

HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D

Typical Performance Curves (Continued)

1000

900

800

VGE = 10V, VCE(CLP) = 300V

L = 25µH, RG = 25Ω

20A, 40E1/50E1

700

600

20A, 40C1/50C1

500

400

10A, 40E1/50E1

300

200

10A, 40C1/50C1

100

0

+25

+50

+75

+100

+125

+150

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF

SWITCHING LOSS/CYCLE

100

TYPICAL DIODE ON VOLTAGE

500

10

RL = 25Ω

IG(REF) = 0.76mA

VCC = BVCES

GATE-

VGE = 10V

8

375

EMITTER

VOLTAGE

6

VCC = 0.25BVCES

250

NOTE:

FOR TURN-OFF GATE CURRENTS IN

4

EXCESS OF 3mA. VCE TURN-OFF IS

NOT ACCURATELY REPRESENTED

125

BY THIS NORMALIZATION.

2

COLLECTOR-EMITTER VOLTAGE

0

0

IG(REF)

20

IG(ACT)

TIME (µs)

IG(REF)

80

IG(ACT)

FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CON-

STANT GATE CURRENT. (REFER TO APPLICA-

TION NOTES AN7254 AND AN7260)

TYPICAL REVERSE RECOVERY TIME

10

TJ = +150oC

TJ = +100oC

1

TJ = +25oC

TJ = -50oC

0.1

0.4 0.6 0.8

1

1.2 1.4 1.6 1.8 2

VEC, EMITTER-COLLECTOR (V)

FIGURE 15. TYPICAL DIODE EMITTER-TO-COLLECTOR

VOLTAGE vs CURRENT FOR ALL TYPES

Test Circuit

60

50

40

dIEC/dT ≥ 100A/µs

30

VR = 30V, TJ = +25oC

20

10

0 2 4 6 8 10 12 14 16 18 20

IEC, EMITTER-COLLECTOR CURRENT (A)

FIGURE 16. TYPICAL DIODE REVERSE-RECOVERY TIME FOR

ALL TYPES

1/RG = 1/RGEN + 1/RGE

RGEN = 100Ω

20V

0V

RL = 13Ω

L = 50µH

VCE(CLP)=

300V

VCC

RGE = 100Ω

FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT

3-24

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