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G3N60C3D 查看數據表(PDF) - Harris Semiconductor

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G3N60C3D Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Specifications HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Gate-Emitter Leakage Current
Switching SOA
BVCES
ICES
VCE(SAT)
VGE(TH)
IC = 250µA, VGE = 0V
VCE = BVCES
TC = +25oC
VCE = BVCES
TC = +150oC
IC = IC110,
VGE = 15V
TC = +25oC
TC = +150oC
IC = 250µA,
VCE = VGE
TC = +25oC
600
-
-
V
-
-
250
µA
-
-
2.0
mA
-
1.65 2.0
V
-
1.85 2.2
V
3.0
5.5
6.0
V
IGES
SSOA
VGE = ±25V
TJ = +150oC
RG = 82
VGE = 15V
L = 1mH
-
VCE(PK)=480V
18
VCE(PK)=600V
2
-
±250
nA
-
-
A
-
-
A
Gate-Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 1)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance
VGEP
QG(ON)
tD(ON)I
tRI
tD(OFF)I
tFI
EON
EOFF
VEC
tRR
RθJC
IC = IC110, VCE = 0.5 BVCES
IC = IC110,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
TJ = 150oC
ICE = IC110
VCE(PK) = 0.8 BVCES
VGE = 15V
RG = 82
L = 1mH
IEC = 3A
IEC = 3A, dIEC/dt = 200A/µs
IEC = 1A, dIEC/dt = 200A/µs
IGBT
Diode
-
8.3
-
V
-
10.8 13.5
nC
-
13.8 17.3
nC
-
5
-
ns
-
10
-
ns
-
325 400
ns
-
130 275
ns
-
85
-
µJ
-
245
-
µJ
-
2.0
2.5
V
-
22
28
ns
-
17
22
ns
-
-
3.75 oC/W
-
-
3.0
oC/W
NOTE:
1. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS
were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces
the true total Turn-Off Energy Loss. Turn-On losses include diode losses.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
2

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