G3N60C3D 查看數據表（PDF） - Harris Semiconductor
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G3N60C3D Datasheet PDF : 11 Pages
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HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
Typical Performance Curves
20
DUTY CYCLE <0.5%, VCE = 10V
18 PULSE DURATION = 250µs
16
14
12
10
8 TC = +150oC
6 TC = +25oC
4
TC = -40oC
2
0
4
6
8
10
12
14
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
20
PULSE DURATION = 250µs
18 DUTY CYCLE <0.5%
12V
16 TC = +25oC
14
12
10
VGE = 15V
8
10V
9.0V
6
8.5V
4
8.0V
2
7.5V
7.0V
0
0
2
4
6
8
10
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
20 PULSE DURATION = 250µs
18 DUTY CYCLE <0.5%, VGE = 10V
16
14
12
10
TC = -40oC
8
6
TC = +150oC
4
TC = +25oC
2
0
0
1
2
3
4
5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3. COLLECTOR-EMITTER ON - STATE VOLTAGE
20 PULSE DURATION = 250µs
18 DUTY CYCLE <0.5%, VGE = 15V
16
14
TC = +25oC
12
10
8
TC = -40oC
6
4
TC = +150oC
2
0
0
1
2
3
4
5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 4. COLLECTOR-EMITTER ON - STATE VOLTAGE
7
VGE = 15V
6
5
4
3
2
1
0
+25
+50
+75
+100
+125
TC, CASE TEMPERATURE (oC)
+150
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A
FUNCTION OF CASE TEMPERATURE
14 VCE = 360V, RGE = 82Ω, TJ = +125oC
70
12
60
10
tSC
8
6
50
40
ISC
30
4
20
2
10
0
0
10
11
12
13
14
15
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
3
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