HGT1S3N60C3DS9A 查看數據表（PDF） - Harris Semiconductor

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HGT1S3N60C3DS9A

6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Harris Semiconductor 

HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS

Typical Performance Curves (Continued)

15

12

9

+100oC

6

+150oC

+25oC

3

30 TC = +25oC, dIEC/dt = 200A/µs

25

tRR

20

tA

15

10

tB

5

0

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

VEC, FORWARD VOLTAGE (V)

FIGURE 18. DIODE FORWARD CURRENT AS A FUNCTION OF

FORWARD VOLTAGE DROP

Test Circuit and Waveforms

0

0.5

1

4

IEC, FORWARD CURRENT (A)

FIGURE 19. RECOVERY TIMES AS A FUNCTION OF FORWARD

CURRENT

RG = 82Ω

L = 1mH

RHRD460

+

VDD = 480V

-

FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT

90%

VGE

VCE

10%

EOFF EON

90%

ICE

10%

tD(OFF) I

tFI

tRI

tD(ON) I

FIGURE 21. SWITCHING TEST WAVEFORMS

Operating Frequency Information

Operating frequency information for a typical device (Figure 13)

is presented as a guide for estimating device performance

for a specific application. Other typical frequency vs collector

current (ICE) plots are possible using the information shown

for a typical unit in Figures 4, 7, 8, 11 and 12. The operating

frequency plot (Figure 13) of a typical device shows fMAX1 or

fMAX2 whichever is smaller at each point. The information is

based on measurements of a typical device and is bounded

by the maximum rated junction temperature.

fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Dead-

time (the denominator) has been arbitrarily held to 10% of

the on- state time for a 50% duty factor. Other definitions are

possible. tD(OFF)I and tD(ON)I are defined in Figure 21.

Device turn-off delay can establish an additional frequency

limiting condition for an application other than TJMAX.

tD(OFF)I is important when controlling output ripple under a

lightly loaded condition.

fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The

allowable dissipation (PD) is defined by PD = (TJMAX -

TC)/RθJC. The sum of device switching and conduction

losses must not exceed PD. A 50% duty factor was used

(Figure 13) and the conduction losses (PC) are approxi-

mated by PC = (VCE x ICE)/2.

EON and EOFF are defined in the switching waveforms

shown in Figure 21. EON is the integral of the instantaneous

power loss (ICE x VCE) during turn-on and EOFF is the inte-

gral of the instantaneous power loss during turn-off. All tail

losses are included in the calculation for EOFF; i.e. the col-

lector current equals zero (ICE = 0).

6

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