HGT1S3N60C3D 查看數據表（PDF） - Harris Semiconductor

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HGT1S3N60C3D

6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Harris Semiconductor 

HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS

TO-220AB

3 LEAD JEDEC TO-220AB PLASTIC PACKAGE

A

ØP

E

Q

H1

D

E1

L1

L

60o

D1

b1

b

123

e

e1

45o

c

J1

LEAD 1

LEAD 2

LEAD 3

TERM. 4

- GATE

- COLLECTOR

- EMITTER

- COLLECTOR

A1

TERM. 4

INCHES

MILLIMETERS

SYMBOL MIN

MAX

MIN

MAX NOTES

A

0.170

0.180

4.32

4.57

-

A1

0.048

0.052

1.22

1.32

-

b

0.030

0.034

0.77

0.86

3, 4

b1

0.045

0.055

1.15

1.39

2, 3

c

0.014

0.019

0.36

0.48

2, 3, 4

D

0.590

0.610 14.99

15.49

-

D1

-

0.160

-

4.06

-

E

0.395

0.410 10.04

10.41

-

E1

-

0.030

-

0.76

-

e

0.100 TYP

2.54 TYP

5

e1

0.200 BSC

5.08 BSC

5

H1

0.235

0.255

5.97

6.47

-

J1

0.100

0.110

2.54

2.79

6

L

0.530

0.550 13.47

13.97

-

L1

0.130

0.150

3.31

3.81

2

ØP

0.149

0.153

3.79

3.88

-

Q

0.102

0.112

2.60

2.84

-

NOTES:

1. These dimensions are within allowable dimensions of Rev. J of

JEDEC TO-220AB outline dated 3-24-87.

2. Lead dimension and finish uncontrolled in L1.

3. Lead dimension (without solder).

4. Add typically 0.002 inches (0.05mm) for solder coating.

5. Position of lead to be measured 0.250 inches (6.35mm) from bot-

tom of dimension D.

6. Position of lead to be measured 0.100 inches (2.54mm) from bot-

tom of dimension D.

7. Controlling dimension: Inch.

8. Revision 1 dated 1-93.

8

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