HGT1S3N60C3DS 查看數據表（PDF） - Harris Semiconductor

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HGT1S3N60C3DS

6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Harris Semiconductor 

HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS

TO-262AA

3 LEAD JEDEC TO-262AA PLASTIC PACKAGE

E

15o

A

H1

D

L1

L

b1

c

b

60o

123

e

J1

e1

LEAD 1

LEAD 2

LEAD 3

TERM. 4

- GATE

- COLLECTOR

- EMITTER

- COLLECTOR

A1

TERM. 4

INCHES

MILLIMETERS

SYMBOL MIN

MAX

MIN

MAX NOTES

A

0.170

0.180

4.32

4.57

-

A1

0.048

0.052

1.22

1.32

3, 4

b

0.030

0.034

0.77

0.86

3, 4

b1

0.045

0.055

1.15

1.39

3, 4

c

0.018

0.022

0.46

0.55

3, 4

D

0.405

0.425 10.29

10.79

-

E

0.395

0.405 10.04

10.28

-

e

0.100 TYP

2.54 TYP

5

e1

0.200 BSC

5.08 BSC

5

H1

0.045

0.055

1.15

1.39

-

J1

0.095

0.105

2.42

2.66

6

L

0.530

0.550 13.47

13.97

-

L1

0.110

0.130

2.80

3.30

2

NOTES:

1. These dimensions are within allowable dimensions of Rev. A of

JEDEC TO-262AA outline dated 6-90.

2. Solder finish uncontrolled in this area.

3. Dimension (without solder).

4. Add typically 0.002 inches (0.05mm) for solder plating.

5. Position of lead to be measured 0.250 inches (6.35mm) from bottom

of dimension D.

6. Position of lead to be measured 0.100 inches (2.54mm) from bottom

of dimension D.

7. Controlling dimension: Inch.

8. Revision 4 dated 10-95.

9

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