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MJE13007-TA3-T(2005) 查看數據表(PDF) - Unisonic Technologies

零件编号
产品描述 (功能)
生产厂家
MJE13007-TA3-T
(Rev.:2005)
UTC
Unisonic Technologies UTC
MJE13007-TA3-T Datasheet PDF : 6 Pages
1 2 3 4 5 6
MJE13007
TYPICAL THERMAL RESPONSE
NPN SILICON TRANSISTOR
1
0.7 D=0.5
0.5
D=0.2
0.2
D=0.1
0.1
0.07 D=0.05
0.05 D=0.02
0.02 D=0.01
SINGLE PULSE
0.01
0.01 0.02 0.05 0.1 0.2
Figure1. Typical Thermal Response
P(pk)
t1
t2
DUTY CYCLE, D=t1/t2
RθJC(t)=r(t)RθJC
RθJC=1.56/W MAX
D CURVES APPLY FOR
POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
TJ(pk)-TC=P(pk )RθJC (t)
0.5
12
5 10 20
50 100 200 500 10k
Time, t (msec)
There are two limitations on the power handling ability of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 7 is based on TC = 25; TJ(pk) is variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be debated when TC 25. Second breakdown limitations do not
debate the same as thermal limitations. Allowable current at the voltages shown on Figure 7 may be found at any
case temperature by using the appropriate curve on Figure 9.
At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Use of reverse biased safe operating area data (Figure 8) is discussed in the applications information section.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R203-019.D

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