MJE13007-TF3-T(2005) 查看數據表（PDF） - Unisonic Technologies
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MJE13007-TF3-T Datasheet PDF : 6 Pages
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MJE13007
NPN SILICON TRANSISTOR
Table 1. Test Conditions for Dynamic Performance
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
+15V
1µF
150Ω 100Ω
3W
3W
MTP8P10
MTP8P10
MPF930 MPF930
+10V
COMMON
Voff
500Ω
500µF
RB1
MUR105
MJE210 RB2
150Ω
3W
MTP12N10
100µF
VCC
L
MUR8100E
A
IB
IC Vclamp=300V
IB
5.1k
TUT
VCE
51
1µF
RESISTIVE
SWITCHING
+125
RC
RB
TUT
SCOPE
D1
-4V
IC
ICM
t1
VCE
VCEM
TIME
BVCEO (SUS)
Inductive
Switching
RBSOA
L=10mH L=20mH
L=500mH
RB2=8
RB2=0
RB2=0
VCC=20V VCC=15V
VCC=15Volts
IC(pk)=100mA RB1 selected RB1 selected
for desired IB1 for desired IB1
tf CLAMPED
tf UNCLAMPED≒t2 t1 ADJUSTED TO
OBTAIN IC
t1 ≤
Lcoil(ICM)
VCC
tf
t
t2 ≤
Lcoil(ICM)
Vclamp
Vclamp
TEST EQUIPMENT
SCOPE-TEKTRONIX
475 OR EQUIVALENT
TYPICAL
WAVEFORMS
VCE PEAK
VCE
IB1
IB
t
t2
IB2
VCC=125V
RC=25Ω
D1=1N5820 OR EQUIV
25µs
+11V
0
9V
tr, tf<10ns
DUTY CYCLE=1.0%
RB AND RC ADJUSTED
FOR DESIRED IB AND IC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R203-019.D
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