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MJE13007L-TF2-T 查看數據表(PDF) - Unisonic Technologies

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产品描述 (功能)
生产厂家
MJE13007L-TF2-T
UTC
Unisonic Technologies UTC
MJE13007L-TF2-T Datasheet PDF : 6 Pages
1 2 3 4 5 6
MJE13007
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Sustaining Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Continuous
Peak (1)
Base Current
Continuous
Peak (1)
Emitter Current
Continuous
Peak (1)
Power Dissipation
(TC = 25°C)
TO-220
TO-220F/TO-220F1
TO-220F2
VCEO
VCBO
VCES
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
400
V
700
V
700
V
9.0
V
8.0
A
16
A
4.0
A
8.0
A
12
A
24
A
80
36
W
38
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62.5
°C/W
TO-220
1.56
Junction to Case
TO-220F/TO-220F1
θJC
TO-220F2
Note: 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle10%.
3.47
°C/W
3.28
Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in
a location beneath the die), the device mounted on a heatsink with thermal grease applied at a mounting
torque of 6 to 8•lbs.
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Emitter Sustaining Voltage
VCEO(SUS) IC=10mA, IB=0
Collector Cutoff Current
ICBO
VCES=700V
VCES=700V, TC=125°C
Emitter Cutoff Current
DC Current Gain
IEBO
VEB=9.0V, IC=0
hFE1
IC=2.0A, VCE=5.0V
hFE2
IC=5.0A, VCE=5.0V
IC=2.0A, IB=0.4A
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=5.0A, IB=1.0A
IC=8.0A, IB=2.0A
Base-Emitter Saturation Voltage
VBE(SAT)
IC=5.0A, IB=1.0A, TC=100°C
IC=2.0A, IB=0.4A
IC=5.0A, IB=1.0A
IC=5.0A, IB=1.0A, TC=100°C
Current-Gain-Bandwidth Product
Output Capacitance
fT
IC=500mA, VCE=10V, f=1.0 MHz
COB VCB=10V, IE=0, f=0.1MHz
RESISTIVE LOAD (TABLE 1)
Delay Time
Rise Time
Storage Time
Fall Time
tD
tR
tS
VCC=125V, IC=5.0A,
IB1=IB2=1.0A, tP=25μs,
Duty Cycle1.0%
tF
Note: Pulse Test: Pulse Width300μs, Duty Cycle2.0%
MIN TYP MAX UNIT
400
V
0.1 mA
1.0 mA
100 μA
8.0
40
5.0
30
1.0 V
2.0 V
3.0 V
3.0 V
1.2 V
1.6 V
1.5 V
4.0 14
MHz
80
pF
0.025 0.1 μs
0.5 1.5 μs
1.8 3.0 μs
0.23 0.7 μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R203-019.J

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