HM3-6508-9 查看數據表（PDF） - Intersil
零件编号
产品描述 (功能)
生产厂家
HM3-6508-9 Datasheet PDF : 6 Pages
| |||
HM-6508
Absolute Maximum Ratings
Thermal Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V
Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to VCC +0.3V
Typical Derating Factor . . . . . . . . . . .1.5mA/MHz Increase in ICCOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Operating Conditions
Thermal Resistance (Typical, Note 1)
θJA
θJC
PDIP Package . . . . . . . . . . . . . . . . . . . 90oC/W
N/A
CERDIP Package . . . . . . . . . . . . . . . . 75oC/W
15oC/W
Maximum Storage Temperature Range . . . . . . . . .-65oC to +150oC
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +175oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300oC
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range
HM-6508B-9, HM-6508-9 . . . . . . . . . . . . . . . . . . . -40oC to +85oC
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1925 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
DC Electrical Specifications VCC = 5V ±10%; TA = -40oC to +85oC (HM-6508B-9, HM-6508-9)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
ICCSB
Standby Supply Current
-
ICCOP Operating Supply
-
Current (Note 1)
ICCDR Data Retention Supply HM-6508B-9
-
Current
HM-6508-9
-
10
µA
IO = 0mA, VI = VCC or GND,
VCC = 5.0V
4
mA
E = 1MHz, IO = 0mA, VI = VCC or
GND, VCC = 5.5V
5
µA
VCC = 2.0V, IO = 0mA, VI = VCC or
10
µA
GND, E = VCC
VCCDR Data Retention Supply Voltage
2.0
-
V
II
IOZ
VIL
VIH
VOL
VOH
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
-1.0
+1.0
µA
VI = VCC or GND, VCC = 5.5V
-1.0
+1.0
µA
VO = VCC or GND, VCC = 5.5V
-0.3
0.8
V
VCC = 4.5V
VCC -2.0 VCC +0.3
V
VCC = 5.5V
-
0.4
V
IO = 3.2mA, VCC = 4.5V
2.4
-
V
IO = -0.4mA, VCC = 4.5V
Capacitance TA = +25oC
SYMBOL
PARAMETER
CI
Input Capacitance (Note 2)
CO
Output Capacitance (Note 2)
NOTES:
1. Typical derating 1.5mA/MHz increase in ICCOP.
2. Tested at initial design and after major design changes 1.
MAX
6
10
UNITS
pF
pF
TEST CONDITIONS
f = 1MHz, All measurements are
referenced to device GND
AC Electrical Specifications VCC = 5V ±10%; TA = -40oC to +85oC (HM-6508B-9, HM-6508-9)
HM-6508B-9
HM-6508-9
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
(1) TELQV Chip Enable Access Time
-
180
-
250
(2) TAVQV Address Access Time
-
180
-
250
(3) TELQX Chip Enable Output Enable Time
5
120
5
160
UNITS
ns
ns
ns
TEST
CONDITIONS
(Notes 1, 3)
(Notes 1, 3, 4)
(Notes 2, 3)
6-3
Share Link: 