HMC-ABH241(V01) 查看數據表（PDF） - Hittite Microwave
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HMC-ABH241 Datasheet PDF : 6 Pages
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v01.1207
HMC-ABH241
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 50 - 66 GHz
Pad Descriptions
Pad Number
Function
1
RFIN
Description
This pad is AC coupled and matched to
50 Ohms.
2, 4, 6,
10, 12, 14
Vgg1, Vgg2
Vgg3
Gate control for amplifier. Please follow “MMIC Amplifier Bias-
ing Procedure” application note. See assembly for required
external components.
Interface Schematic
3
3, 5, 7,
9, 11, 13
8
Die Bottom
Vdd1, Vdd2,
Vdd3
Power Supply Voltage for the amplifier. See assembly for
required external components.
RFOUT
GND
This pad is AC coupled and matched to
50 Ohms.
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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