HMC-ALH435 查看數據表（PDF） - Hittite Microwave
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HMC-ALH435 Datasheet PDF : 6 Pages
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v03.1009
HMC-ALH435
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 5 - 20 GHz
Pad Descriptions
Pad Number
Function
1
RFIN
Description
This pad is AC coupled
and matched to 50 Ohms.
1
Interface Schematic
Gate control for amplifier. Please follow “MMIC Amplifier Bias-
2
Vgg1
ing Procedure” application note. See assembly for required
external components.
Gate control for amplifier. Please follow “MMIC Amplifier Bias-
3
Vgg2
ing Procedure” application note. See assembly for required
external components.
4
RFOUT
This pad is AC coupled
and matched to 50 Ohms.
Power Supply Voltage for the amplifier. See assembly for
5
Vdd
required external components.
Die bottom
GND
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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