HMC323 查看數據表（PDF） - Hittite Microwave

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HMC323

GaAs InGaP HBT MMIC DRIVER AMPLIFIER, DC - 3.0 GHz

Hittite Microwave 

v01.0701

MICROWAVE CORPORATION

HMC323

GaAs InGaP HBT MMIC DRIVER

AMPLIFIER, DC - 3.0 GHz

Typical Applications

1

This Amplifier is ideal for RF Systems

where high linearity is required such as:

• 2.2 - 2.7 MMDS

• Cellular & Basestations

• CATV

• WirelessLAN

Functional Diagram

Features

P1dB Output Power: +16 dBm

Output IP3: +31 dBm

Gain: 13 dB

Single Supply: 8.75V

Ultra Small Package: SOT26

General Description

The HMC323 is a GaAs InGaP Heterojunction Bipo-

lar Transistor (HBT) MMIC amplifier that operates

from a single Vcc supply. The surface mount SOT26

amplifier can be used as a broadband gain stage

or used with external matching for optimized narrow

band applications. The HMC323 offers 13 dB of

gain and +19 dBm of saturated power while only

requiring 57 mA from a 8.75V supply. Using a Dar-

lington feedback pair results in reduced sensitivity

to normal process variations and provides a good

50-ohm input/output port match.

Electrical Specifications, TA = +25° C

Parameter

Frequency Range

Gain

Gain Variation Over Temperature

Input Return Loss

Output Return Loss

Reverse Isolation

Output Power for 1dB Compression (P1dB) @ 1 GHz

Saturated Output Power (Psat) @ 1 GHz

Output Third Order Intercept (IP3) @ 1 GHz

Noise Figure

Supply Current (Icc)

Vs= +8.75V, Rbias= 22 Ohm

Min.

Typ.

Max.

DC - 3.0

10

13

16

0.015

0.025

8

13

6

9

16

20

13

16

16

19

28

31

6

57

Units

GHz

dB

dB/ °C

dB

dB

dB

dBm

dBm

dBm

dB

mA

1 - 152

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Visit us at www.hittite.com, or Email at sales@hittite.com

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