BR93LC66 查看數據表（PDF） - ROHM Semiconductor

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BR93LC66

4,096-Bit Serial Electrically Erasable PROM

ROHM Semiconductor 

Memory ICs

•Block diagram

BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV

CS

Command code

Control

SK

Clock generation

Command

DI

register

DO

Dummy bit

Power supply

voltage detector

Write disable

High voltage

generator

Address

Address

8bit

buffer

decoder

8bit

Data

register

16bit

R/W

amplifier

16bit

4096bit

EEPROM array

•Absolute maximum ratings (Ta = 25°C)

Parameter

Applied voltage

BR93LC66

Power

dissipation

BR93LC66F / RF

BR93LC66FV

Storage temperature

Operating temperature

Terminal voltage

Symbol

VCC

Pd

Tstg

Topr

—

Limits

Unit

– 0.3 ~ + 6.5

V

500∗1

350∗2

mW

300∗3

– 65 ~ + 125

°C

– 40 ~ + 85

°C

– 0.3 ~ VCC + 0.3

V

∗1 Reduced by 5.0mW for each increase in Ta of 1°C over 25°C.

∗2 Reduced by 3.5mW for each increase in Ta of 1°C over 25°C.

∗3 Reduced by 3.0mW for each increase in Ta of 1°C over 25°C.

•Recommended operating conditions (Ta = 25°C)

Parameter

Symbol Min. Typ. Max.

Unit

Power supply Writing

2.7

—

5.5

V

VCC

voltage

Reading

2.0

—

5.5

V

Input voltage

VIN

0

—

VCC

V

2

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