BR93LC66 查看數據表（PDF） - ROHM Semiconductor

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BR93LC66

4,096-Bit Serial Electrically Erasable PROM

ROHM Semiconductor 

Memory ICs

BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV

For low voltage operation (unless otherwise noted, Ta = – 40 to 85°C, VCC = 3V ± 10%)

Parameter

Symbol Min. Typ. Max. Unit

SK clock frequency

fSK

—

— 250 kHz

SK "H" time

tSKH

1

—

—

µs

SK "L" time

tSKL

1

—

—

µs

CS "L" time

tCS

1

—

—

µs

CS setup time

tCSS 200

—

—

ns

DI setup time

tDIS 400

—

—

ns

CS hold time

tCSH

0

—

—

ns

DI hold time

tDIH 400

—

—

ns

Data "1" output delay time

tPD1

—

—

2

µs

Data "0" output delay time

tPD0

—

—

2

µs

Time from CS to output confirmation

tSV

—

—

2

µs

Time from CS to output High impedance tDF —

— 400 ns

Write cycle time

tE / W

—

—

25

ms

When reading at low voltage (Unless otherwise noted, Ta = – 40 to 85°C, VCC = 2.0V)

Parameter

Symbol Min. Typ. Max. Unit

SK clock frequency

fSK

—

— 200 kHz

SK "H" time

tSKH

2

—

—

µs

SK "L" time

tSKL

2

—

—

µs

CS "L" time

tCS

2

—

—

µs

CS setup time

tCSS

400

—

—

ns

DI setup time

tDIS

800

—

—

ns

CS hold time

tCSH

0

—

—

ns

DI hold time

Data "1" output delay time

tDIH

800

—

—

ns

tPD1

—

—

4

µs

Data "0" output delay time

tPD0

—

—

4

µs

Time from CS to output High impedance tDF

—

— 800 ns

᭺ Not designed for radiation resistance.

5

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