HMC757 查看數據表（PDF） - Hittite Microwave

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HMC757

GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER, 16 - 24 GHz

Hittite Microwave 

v00.0409

HMC757

GaAs pHEMT MMIC 1/2 WATT

POWER AMPLIFIER, 16 - 24 GHz

Pad Descriptions

Pad Number

Function

1

RFIN

2

Vgg

Description

This pad is AC coupled

and matched to 50 Ohms.

Gate control for PA. Adjust Vgg to achieve recommended

bias current. External bypass caps 100pF, 0.1uF and 4.7uF

are required.

Interface Schematic

3

3

Vdd

Drain bias for amplifier. External bypass caps 100pF, 0.1uF

and 4.7uF are required

4

RFOUT

This pad is AC coupled

and matched to 50 Ohms.

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

3-6

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