HMC863 查看數據表（PDF） - Hittite Microwave

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产品描述 (功能)

生产厂家

HMC863

GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - 29.5 GHz

Hittite Microwave 

v00.1109

3

Gain & Power vs.

Supply Current @ 27 GHz

30

Gain (dB)

29

P1dB (dBm)

Psat (dBm)

28

27

26

25

350

360

370

380

390

400

Idd (mA)

HMC863

GaAs pHEMT MMIC ½ WATT

POWER AMPLIFIER, 24 - 29.5 GHz

Gain & Power vs.

Supply Voltage @ 27 GHz

30

Gain (dB)

29

P1dB (dBm)

Psat (dBm)

28

27

26

25

5

5.2

5.4

5.6

5.8

6

Vdd (V)

Power Dissipation

3

2.5

2

24 GHz

25 GHz

1.5

26 GHz

27 GHz

28 GHz

1

-18

-15

-12

-9

-6

-3

0

3

6

INPUT POWER (dBm)

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

RF Input Power (RFIN)

Channel Temperature

Continuous Pdiss (T= 85 °C)

(derate 37.2 mW/°C above 85 °C)

Thermal Resistance

(channel to die bottom)

Storage Temperature

Operating Temperature

+6.5V

+26 dBm

150 °C

2.42W

26.9 °C/W

-65 to 150 °C

-55 to +85 °C

Typical Supply Current vs. Vdd

Vdd (V)

Idd (mA)

+5.0

375

+5.5

375

+6.0

375

Note: Amplifier will operate over full voltage ranges shown

above Vgg adjusted to achieve Idd = 375mA at +5.5V

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

3 - 146

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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