TYN640RG(2002) 查看數據表（PDF） - STMicroelectronics
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TYN640RG Datasheet PDF : 4 Pages
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TYNx40 Series
Fig. 1: Maximum average power dissipation
versus average on-state current.
Fig. 2: Average and DC on-state current versus
case temperature.
P(W)
40
α = 180°
35
30
25
20
15
10
5
0
0
5
360°
IT(av)(A)
α
10
15
20
25
30
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
IT(av)(A)
50
40
30
20
10
0
0
25
D.C.
α = 180°
Tcase( °C)
50
75
100
125
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature.
K = [Zth/Rth]
1.00
Zth(j-c)
0.10
Zth(j-a)
0.01
1E-3
1E-2
tp(s)
1E-1 1E+0
1E+1
1E+2 5E+2
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25°C]
2.5
2.0
IGT
1.5
IH & IL
1.0
0.5
Tj(°C)
0.0
-40 -20 0 20 40 60 80 100 120 140
Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t.
ITSM(A)
500
450
400
350
300
250
200
150
100
50
0
1
Non repetitive
Tj initial = 25 °C
Repetitive
Tcase = 95 °C
Number of cycles
10
100
tp = 10ms
One cycle
1000
ITSM(A),I 2t(A2s)
5000
1000
dI/dt
limitattion
Tj initial = 25 °C
ITSM
I2t
100
0.01
tp(ms)
0.10
1.00
10.00
3/4
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