HGTG20N60B3D 查看數據表（PDF） - Fairchild Semiconductor

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HGTG20N60B3D

40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Fairchild Semiconductor 

Data Sheet

HGTG20N60B3D

December 2001

40A, 600V, UFS Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode

The HGTG20N60B3D is a MOS gated high voltage

switching device combining the best features of MOSFETs

and bipolar transistors. The device has the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state voltage

drop varies only moderately between 25oC and 150oC. The

diode used in anti-parallel with the IGBT is the RHRP3060.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential.

Formerly developmental type TA49016.

Ordering Information

PART NUMBER

PACKAGE

BRAND

HGTG20N60B3D

TO-247

G20N60B3D

NOTE: When ordering, use the entire part number.

Symbol

C

Features

• 40A, 600V at TC = 25oC

• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC

• Short Circuit Rated

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Packaging

JEDEC STYLE TO-247

E

C

G

COLLECTOR

(BOTTOM SIDE METAL)

G

E

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,417,385

4,430,792

4,443,931

4,466,176

4,516,143

4,532,534

4,587,713

4,598,461

4,605,948

4,620,211

4,631,564

4,639,754

4,639,762

4,641,162

4,644,637

4,682,195

4,684,413

4,694,313

4,717,679

4,743,952

4,783,690

4,794,432

4,801,986

4,803,533

4,809,045

4,809,047

4,810,665

4,823,176

4,837,606

4,860,080

4,883,767

4,888,627

4,890,143

4,901,127

4,904,609

4,933,740

4,963,951

4,969,027

©2001 Fairchild Semiconductor Corporation

HGTG20N60B3D Rev. B

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