HP147TS 查看數據表（PDF） - Shantou Huashan Electronic Devices
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HP147TS Datasheet PDF : 2 Pages
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Shantou Huashan Electronic Devices Co.,Ltd.
PNP DARLINGTON TRANSISTOR
HP147TS
█ APPLICATIONS
High DC Current Gain
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation（Tc=25℃）…………………… 70W
VCBO——Collector-Base Voltage………………………… -100V
VCEO——Collector-Emitter Voltage……………………… -100V
VEBO——Emitter-Base Voltage……………………………… -5V
IC——Collector Current（DC）……………………………… -8A
IB——Base Current…………………………………………-0.5A
TO-220
1―Base，B
2―Collector，C
3―Emitter, E
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Characteristics
BVCEO(SUS) Collector-Emitter Sustaining Voltage
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter-Base Cutoff Current
HFE（1） DC Current Gain
HFE（2）
VCE(sat1) Collector- Emitter Saturation Voltage
VCE(sat2)
VBE(sat) Base- Emitter Saturation Voltage
VBE(on) Base- Emitter On Voltage
tD
Deiay time
tR
Rise Time
tS
Storage Time
tF
Fall Time
Min Typ Max Unit
Test Conditions
-100
V IC=-30mA, IB=0
-2 mA VCE=-50V, IB=0
-1 mA VCB=-100V, IE=0
-2 mA VEB=-5V, IC=0
1000
VCE=-4V, IC=-0.5A
1000
VCE=-4V, IC=-3A
-2 V IC=-5A, IB=-10mA
-3 V IC=-10A, IB=-40mA
-3.5 V IC=-10A, IB=-40mA
-3 V VCE=-4V,IC=-10A,
0.15
0.55
2.5
uS
uS
Vcc=-30V,Ic=-5A
IB1=-20mA
uS IB2=20mA
2.5
uS
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