5962R9568901TEC 查看數據表（PDF） - Intersil

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5962R9568901TEC

Radiation Hardened Quad Differential Line Receiver

Intersil 

HS-26C32RH-T

Die Characteristics

DIE DIMENSIONS:

2140µm x 3290µm x 533µm ±25.4µm

(85 x 130 x 21mils ±1mil)

METALLIZATION:

M1: Mo/Tiw

Thickness: 5800Å

M2: Al/Si/Cu

Thickness: 10kÅ ±1kÅ

SUBSTRATE POTENTIAL:

Internally connected to VDD . May be left floating.

Metallization Mask Layout

AIN

(1)

BACKSIDE FINISH:

Silicon

PASSIVATION:

Type: SiO2

Thickness: 8kÅ ±1kÅ

WORST CASE CURRENT DENSITY:

< 2.0e5 A/cm2

TRANSISTOR COUNT:

315

PROCESS:

Radiation Hardened CMOS, AVLSI

HS-26C32RH

VDD

BIN

(16)

(15)

AIN (2)

(14) BIN

AOUT (3)

ENAB (4)

(13) BOUT

(12) ENAB

COUT (5)

(11) DOUT

CIN (6)

(10) DIN

(7)

(8)

(9)

CIN

GND

DIN

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