HSD4M64B4 查看數據表（PDF） - Hanbit Electronics Co.,Ltd

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产品描述 (功能)

生产厂家

HSD4M64B4

Synchronous DRAM Module 32Mbyte (4Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V

Hanbit Electronics Co.,Ltd 

HANBit

HSD4M64B4

Active standby current in

power-down mode

Active standby current in

non power-down mode

(One bank active)

Operating current

(Burst mode)

Refresh current

ICC2NS

ICC3P

ICC3PS

ICC3N

ICC3NS

ICC4

ICC5

CKE ≥ VIH(min)

CLK ≤ VIL(max), tCC=∞

Input signals are stable

CKE ≤ VIL(max), tCC=10ns

CKE&CLK ≤ VIL(max)

tCC=∞

CKE≥VIH(min),

CS*≥VIH(min), tCC=10ns

Input signals are changed

one time during 20ns

CKE≥VIH(min)

CLK ≤VIL(max), tCC=∞

Input signals are stable

IO = 0 mA

Page burst

4Banks Activated

tCCD = 2CLKs

tRC ≥ tRC(min)

Self refresh current

ICC6

Notes :

1. Measured with outputs open.

2. Refresh period is 64ms.

CKE ≤ 0.2V

6

2

mA

2

20

mA

10

115 90 90 mA

1

90 90 85 mA

2

1

mA

450

uA

AC OPERATING TEST CONDITIONS

(vcc = 3.3V ± 0.3V, TA = 0 to 70°C)

PARAMETER

AC Input levels (Vih/Vil)

Input timing measurement reference level

Input rise and fall time

Output timing measurement reference level

Output load condition

Value

2.4/0.4

1.4

tr/tf = 1/1

1.4

See Fig. 2

UNIT

V

V

ns

V

URL:www.hbe.co.kr

REV.1.0(August.2002)

-6-

HANBit Electronics Co.,Ltd.

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