HSD4M64B4W 查看數據表（PDF） - Hanbit Electronics Co.,Ltd

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HSD4M64B4W

Synchronous DRAM Module 32Mbyte(4Mx64-Bit), 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V

Hanbit Electronics Co.,Ltd 

HANBit

HSD4M64B4W

Synchronous DRAM Module 32Mbyte(4Mx64-Bit), 144pin SO-DIMM,

4Banks, 4K Ref., 3.3V

Part No. HSD4M64B4W

GENERAL DESCRIPTION

The HSD4M64B4W is a 4M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of

four CMOS 1M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate.

Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The

HSD4M64B4W is a SO-DIMM(Small Outline Dual in line Memory Module) and is intended for mounting into 144-pin edge

connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be

useful for a variety of high bandwidth, high performance memory system applications All module components may be

powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.

FEATURES

• Part Identification

HSD4M64B4W-10 : 100MHz (CL=2)

HSD4M64B4W-10L : 100MHz (CL=3)

HSD4M64B4W-12 : 125MHz (CL=3)

HSD4M64B4W-13 : 133MHz (CL=3)

• Burst mode operation

• Auto & self refresh capability (4096 Cycles/64ms)

• LVTTL compatible inputs and outputs

• Single 3.3V ±0.3V power supply

• MRS cycle with address key programs

- Latency (Access from column address)

- Burst length (1, 2, 4, 8 & Full page)

- Data scramble (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the system clock

• The used device is 1M x 16bit x 4Banks SDRAM

URLwww.hbe.co.kr

Rev.0.0 (March / 2002)

1

HANBit Electronics Co.,Ltd.

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