HSD4M64D4B-10L 查看數據表（PDF） - Hanbit Electronics Co.,Ltd

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HSD4M64D4B-10L

Synchronous DRAM Module 32Mbyte (4Mx64-Bit), DIMM, 4Banks, 4K Ref., 3.3V

Hanbit Electronics Co.,Ltd 

HANBit

HSD4M64D4B

Synchronous DRAM Module 32Mbyte (4Mx64-Bit), DIMM, 4Banks, 4K Ref.,

3.3V

Part No. HSD4M64D4B

GENERAL DESCRIPTION

The HSD4M64D4B is a 4M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of

four CMOS 1M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 168-pin glass-epoxy substrate.

Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD4M64D4B

is a DIMM(Dual in line Memory Module) and is intended for mounting into 168-pin edge connector sockets. Synchronous

design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range

of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high

performance memory system applications All module components may be powered from a single 3.3V DC power supply

and all inputs and outputs are LVTTL-compatible.

FEATURES

• Part Identification

HSD4M64D4B-10 : 100MHz ( CL=2)

HSD4M64D4B-10L : 100MHz ( CL=3)

HSD4M64D4B- 8 : 125MHz ( CL=3)

• Burst mode operation

• Auto & self refresh capability (4096 Cycles/64ms)

• LVTTL compatible inputs and outputs

• Single 3.3V ±0.3V power supply

• MRS cycle with address key programs

- Latency (Access from column address)

- Burst length (1, 2, 4, 8 & Full page)

- Data scramble (Sequential & Interleave)

• JEDEC standard

• All inputs are sampled at the positive going edge of the system clock

• The used device is 1Mx16Bitx4Banks SDRAM

URL:www.hbe.co.kr

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REV.1.0 (August.2002)

HANBit Electronics Co.,Ltd

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