HSD4M64D4B-10L 查看數據表（PDF） - Hanbit Electronics Co.,Ltd

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HSD4M64D4B-10L

Synchronous DRAM Module 32Mbyte (4Mx64-Bit), DIMM, 4Banks, 4K Ref., 3.3V

Hanbit Electronics Co.,Ltd 

HANBit

HSD4M64D4B

A0 ~ A11

BA0 ~ BA1

/RAS

/CAS

/WE

DQM0 ~ 7

DQ0 ~ 63

Vcc/Vss

Address

Row/column addresses are multiplexed on the same pins.

Row address : RA0 ~ RA11, Column address : CA0 ~ CA8

Selects bank to be activated during row address latch time.

Bank select address

Selects bank for read/write during column address latch time.

Latches row addresses on the positive going edge of the CLK with RAS low.

Row address strobe

Enables row access & precharge.

Column address Latches column addresses on the positive going edge of the CLK with CAS low.

strobe

Enables column access.

Write enable

Enables write operation and row precharge.

Latches data in starting from CAS, WE active.

Data input/output Makes data output Hi-Z, tSHZ after the clock and masks the output.

mask

Blocks data input when DQM active. (Byte masking)

Data input/output Data inputs/outputs are multiplexed on the same pins.

Power

Power and ground for the input buffers and the core logic.

supply/ground

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATING

Voltage on Any Pin Relative to Vss

Voltage on Vcc Supply Relative to Vss

VIN ,OUT

Vcc

-1V to 4.6V

-1V to 4.6V

Power Dissipation

Storage Temperature

PD

TSTG

4W

-55oC to 150oC

Short Circuit Output Current

IOS

50mA

Notes:

Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be

restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

DC OPERATING CONDITIONS

(Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C) )

PARAMETER

SYMBOL

MIN

TYP.

MAX

Supply Voltage

Vcc

3.0

3.3

3.6

Input High Voltage

VIH

Input Low Voltage

VIL

Output High Voltage

VOH

Output Low Voltage

VOL

Input leakage current

I IL

2.0

3.0

Vcc+0.3

-0.3

0

0.8

2.4

-

-

-4

-

4

-1.5

-

1.5

UNIT

V

V

V

V

V

uA

NOTE

1

2

IOH = -2mA

IOL = 2mA

3

URL:www.hbe.co.kr

-4-

REV.1.0 (August.2002)

HANBit Electronics Co.,Ltd

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