DMMT3906W(2014) 查看數據表（PDF） - Diodes Incorporated.
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DMMT3906W Datasheet PDF : 6 Pages
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DMMT3906W
Electrical Characteristics (@TA = +25°C unless otherwise specified)
Characteristic
Symbol
Min
TYP
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO
-40
⎯
Collector-Emitter Breakdown Voltage (Note 9) BVCEO
-40
⎯
Emitter-Base Breakdown Voltage
BVEBO
-5.0
⎯
Collector Cutoff Current
ICEX
⎯
⎯
Base Cutoff Current
IBL
⎯
⎯
ON CHARACTERISTICS (Note 9)
DC Current Gain
60
80
hFE
100
⎯
60
30
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
⎯
Base-Emitter Saturation Voltage
VBE(SAT)
0.65
⎯
⎯
MATCHING CHARACTERISTICS
DC Current Gain Matching (Note 10)
hFE1 / hFE2
⎯
1
Base-Emitter Voltage Matching (Note 11)
VBE1 -
⎯
VBE2
1
Collector-Emitter Saturation Voltage (Note 10) VCE(SAT)1 /
VCE(SAT)2
⎯
1
Base-Emitter Saturation Voltage (Note 10)
VBE(SAT)1 /
VBE(SAT)2
⎯
1
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
⎯
⎯
Input Capacitance
Input Impedance
Cibo
⎯
⎯
hie
2.0
⎯
Voltage Feedback Ratio
Small Signal Current Gain
hre
0.1
⎯
hfe
100
⎯
Output Admittance
hoe
3.0
⎯
Current Gain-Bandwidth Product
fT
250
⎯
Max
⎯
⎯
⎯
-50
-50
⎯
⎯
300
⎯
⎯
-250
-400
-850
-950
2
2
2
2
4.5
10.0
12
10
400
60
⎯
Noise Figure
NF
⎯
⎯
4.0
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
td
⎯
⎯
35
tr
⎯
⎯
35
ts
⎯
⎯
225
tf
⎯
⎯
75
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
10. Is the ratio of one transistor compared to the other transistor.
11. VBE1 - VBE2 is the absolute difference of one transistor compared to the other transistor.
Unit
Test Condition
V
IC = -100μA, IE = 0
V
IC = -1.0mA, IB = 0
V
IE = -100μA, IC = 0
nA
VCE = -30V, VEB(OFF) = 3.0V
nA
VCE = -30V, VEB(OFF) = 3.0V
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
⎯
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = - 1.0V
IC = -100mA, VCE = -1.0V
mV
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
mV
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
%
IC = -2mA, VCE = -5V
mV IC = -2mA, VCE = -5V
%
IC = -10mA, IB = -1.0mA
%
IC = -10mA, IB = -1.0mA
pF
pF
kΩ
x 10-4
⎯
μS
MHz
dB
VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
VCE = -20V, IC = -10mA,
f = 100MHz
VCE = -5.0V, IC = -100μA,
RS = 1.0kΩ, f = 1.0kHz
ns
VCC = -3.0V, IC = -10mA,
ns
VBE(off) = 0.5V, IB1 = -1.0mA
ns
VCC = -3.0V, IC = -10mA,
ns
IB1 = IB2 = -1.0mA
DMMT3906W
Document number: DS30312 Rev. 12 - 2
3 of 6
www.diodes.com
May 2014
© Diodes Incorporated
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