HVD359 查看數據表（PDF） - Renesas Electronics
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HVD359 Datasheet PDF : 5 Pages
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HVD359
Absolute Maximum Ratings
Item
Reverse voltage
Junction temperature
Storage temperature
VR
Tj
Tstg
Symbol
Value
15
125
−55 to +125
(Ta = 25°C)
Unit
V
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse current
IR1
IR2
Capacitance
C1
C4
Capacitance ratio
n
Series resistance
rS
ESD-Capability *1
10
nA VR = 10 V
100
VR = 10 V, Ta = 60°C
24.8
29.8
pF VR = 1 V, f = 1 MHz
6.00
8.30
VR = 4 V, f = 1 MHz
3.00
C1/C4
1.50
Ω
VR = 4 V, f =100 MHz
200
V
C = 200 pF, R = 0 Ω, Both forward
and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR ≥ 20 nA at VR =10 V
2. For SFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip
part is considered as unquestioned. Please kindly consider soldering nature.
Rev.3.00 Jan 24, 2006 page 2 of 4
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